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TPC6502
TOSHIBA Transistor Silicon NPN Epitaxial Type
TPC6502
High-Speed Switching Applications DC/DC Converter Applications Strobe Applications
* * * High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating 100 80 50 7 3.0 5.0 300 0.8 1.6 150 -55 to 150 Unit V V V V A mA W C C
JEDEC JEITA TOSHIBA
2-3T1A
Weight: 0.01 g (typ.)
Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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TPC6502
Electrical Characteristics (Ta = 25C)
Characteristic Collector cutoff current Emitter cutoff current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.3 A VCE = 2 V, IC = 1 A IC = 1 A, IB = 20 mA IC = 1 A, IB = 20 mA VCB = 10 V, IE = 0, f = 1 MHz See Figure 1 circuit diagram. VCC 30 V, RL = 30 - IB1 = -IB2 = 33.3 mA Min 50 400 200 Typ. 13 40 500 120 Max 100 100 1000 0.14 1.10 ns V V pF Unit nA nA V
VCC 20 s IB1 IB1 RL Output
Input IB2
IB2 Duty cycle < 1%
Figure 1. Switching Time Test Circuit & Timing Chart
Circuit Configuration
6 5 4
Marking
Lot code (month) Lot No.
Part No. (or abbreviation code)
H2B
Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1
2
3
Pin #1
2
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TPC6502
IC - VCE
4
Common emitter Common emitter Ta25 Ta = 25C Single nonrepetitive Single nonrepetitive pulse 70 60
70 60
hFE - IC
10000
Common emitter Common emitter VCE=2V VCE = nonrepetitive Single 2 V Single nonrepetitive pulse Ta100 25 -55
(A)
3
50
Collector current IC
30 20 10 5
2
DC current gain hFE
40
1000
100
1
2 IB=1mA
0 0 0.2 0.4 0.6 0.8 1
Collector-emitter voltage VCE (V)
10 0.001
0.01
0.1
1
(A)
10
Collector current IC
VCE (sat) - IC
11
VBE (sat) - IC
10
Base-emitter saturation voltage VBE (sat) (V)
Common emitter Common emitter IC/IB50 IC/IB =nonrepetitive Single 50 Single nonrepetitive pulse
Collector-emitter saturation voltage VCE (sat) (V)
Common emitter Common emitter IC/IB=50 IC/IB = 50 Single nonrepetitive Single nonrepetitive pulse
0.1 0.1
Ta=100 -55
-55
1
25
0.01 0.01
25
Ta100
0.001 0.001 0.001
0.01 0.1 Collector current
1
10
0.1 0.001
IC
(A)
0.01 0.1 1 Collector current IC (A)
10
IC - VBE
3 Common emitter VCE = 2 V Single nonrepetitive pulse 2
Collector current IC
(A)
1
Ta = 100C
25 -55
0 0
0.4
0.8
1.2
1.6
Base-emitter voltage
VBE (V)
3
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TPC6502
rth(j-a) - tw 1000
Transient thermal resistance rth(j-a) (C/W)
100
10
Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
1 0.001
0.01
0.1
1
Pulse width tw (s)
10
100
1000
Safe Operating Area
10
IC IC max (pulse) * MAX.pulsed 10ms 10 ms*
11ms ms*
100s 100 s*
10s 10 s*
ICPMAX (continuous) 10s 100ms Ic MAX.continuous 10 s* 100 ms*
Collector current IC
(A)
1
DC operation DC o p Ta = (Ta=25 25C
0.1
*: Single nonrepetitive pulse Ta = 25C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices are not mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2). These characteristic curves must be derated linearly with increase in temperature.
0.1 1 10 100
0.01
Collector-emitter voltage VCE (V)
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TPC6502
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-13

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